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MSS50 - High Barrier Silicon Schottky Diodes

General Description

The Aeroflex / Metelics MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.

Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.

Key Features

  • VF , RD and CJ matching options.
  • Chip, beam lead or packaged devices.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 100 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC + 260 ºC for 5 sec.

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Datasheet Details

Part number MSS50
Manufacturer Aeroflex
File Size 170.29 KB
Description High Barrier Silicon Schottky Diodes
Datasheet download datasheet MSS50 Datasheet

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MSS50,000 Series High Barrier Silicon Schottky Diodes Description The Aeroflex / Metelics MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.