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AT-42000 - Up to 6 GHz Medium Power Up to 6 GHz Medium Power

Download the AT-42000 datasheet PDF. This datasheet also covers the AT-42000_Agilent(Hewlett variant, as both devices belong to the same up to 6 ghz medium power up to 6 ghz medium power family and are provided as variant models within a single manufacturer datasheet.

General Description

Hewlett-Packard’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance.

The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions.

Key Features

  • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz.
  • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz.
  • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz.
  • High Gain-Bandwidth Product: 9.0 GHz Typical fT This device is designed for use in low noise, wideband amplifier, mixer and oscillator.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT-42000_Agilent(Hewlett-Packard).pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AT-42000
Manufacturer Agilent(Hewlett-Packard)
File Size 57.45 KB
Description Up to 6 GHz Medium Power Up to 6 GHz Medium Power
Datasheet download datasheet AT-42000 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor HP
AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Agilent
AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avago
AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor HP
AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor HP

Other Datasheets by Agilent(Hewlett-Packard)

Part Number Description
AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor
AT-41470 Up to 6 GHz Low Noise Silicon Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth Product: 9.0 GHz Typical fT This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz , makes this device easy to use as a low noise amplifier. The AT-42000 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process.