• Part: AT-42010
  • Description: Up to 6 GHz Medium Power Silicon Bipolar Transistor
  • Manufacturer: Agilent(Hewlett-Packard)
  • Size: 52.90 KB
Download AT-42010 Datasheet PDF
Agilent(Hewlett-Packard)
AT-42010
AT-42010 is Up to 6 GHz Medium Power Silicon Bipolar Transistor manufactured by Agilent(Hewlett-Packard).
- Part of the AT-42010_Agilent(Hewlett comparator family.
Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data Features - High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz - High Gain at 1␣ dB␣ pression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz - Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz - High Gain-Bandwidth Product: 8.0 GHz Typical fT - Hermetic Gold-ceramic Microstrip Package functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications...