AT-42010 - Up to 6 GHz Medium Power Silicon Bipolar Transistor

This page provides the datasheet information for the AT-42010, a member of the AT-42010_Agilent(Hewlett Up to 6 GHz Medium Power Silicon Bipolar Transistor family.

Product Overview

Agilent(Hewlett-Packard)

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Datasheet Details

Part number	AT-42010
Manufacturer	Agilent(Hewlett-Packard)
File Size	52.90 KB
Description	Up to 6 GHz Medium Power Silicon Bipolar Transistor
Datasheet	AT-42010 Datasheet
Additional preview pages of the AT-42010 datasheet.

AT-42010 Product details

Description

Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.

The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package.

Features

High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz.
High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz.
Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz.
High Gain-Bandwidth Product: 8.0 GHz Typical fT.
Hermetic Gold-ceramic Microstrip Package functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to.

📁 Similar Datasheet

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Other Datasheets by Agilent(Hewlett-Packard)

AT-42000 - Up to 6 GHz Medium Power Up to 6 GHz Medium Power
AT-42070 - Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-42086 - Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-41435 - Up to 6 GHz Low Noise Silicon Bipolar Transistor
AT-41470 - Up to 6 GHz Low Noise Silicon Bipolar Transistor

Published: Mar 24, 2005 |