AT-42010 Datasheet PDF (Up to 6 GHz Medium Power Silicon Bipolar Transistor) | Download Agilent(Hewlett-Packard) AT-42010

Download the AT-42010 datasheet PDF. This datasheet also covers the AT-42010_Agilent(Hewlett variant, as both devices belong to the same up to 6 ghz medium power silicon bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.

The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package.

Key Features

High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz.
High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz.
Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz.
High Gain-Bandwidth Product: 8.0 GHz Typical fT.
Hermetic Gold-ceramic Microstrip Package functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to.

Datasheet Details

Part number	AT-42010
Manufacturer	Agilent(Hewlett-Packard)
File Size	52.90 KB
Description	Up to 6 GHz Medium Power Silicon Bipolar Transistor
Datasheet	AT-42010 Datasheet

Part number

AT-42010

Manufacturer

Agilent(Hewlett-Packard)

File Size

52.90 KB

Description

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Datasheet

AT-42010 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
AT-42035	Up to 6 GHz Medium Power Silicon Bipolar Transistor	HP
AT-42085	Up to 6 GHz Medium Power Silicon Bipolar Transistor	Agilent
AT-42086	Up to 6 GHz Medium Power Silicon Bipolar Transistor	Avago
AT-41400	Up to 6 GHz Low Noise Silicon Bipolar Transistor	HP
AT-41410	Up to 6 GHz Low Noise Silicon Bipolar Transistor	HP

Part Number

Description

Manufacturer

AT-42035

Up to 6 GHz Medium Power Silicon Bipolar Transistor

AT-42085

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Agilent

AT-42086

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Avago

AT-41400

Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41410

Up to 6 GHz Low Noise Silicon Bipolar Transistor

Other Datasheets by Agilent(Hewlett-Packard)

Part Number	Description
AT-42000	Up to 6 GHz Medium Power Up to 6 GHz Medium Power
AT-42070	Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-42086	Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-41435	Up to 6 GHz Low Noise Silicon Bipolar Transistor
AT-41470	Up to 6 GHz Low Noise Silicon Bipolar Transistor

Part Number

Description

AT-42000

Up to 6 GHz Medium Power Up to 6 GHz Medium Power

AT-42070

Up to 6 GHz Medium Power Silicon Bipolar Transistor

AT-42086

Up to 6 GHz Medium Power Silicon Bipolar Transistor

AT-41435

Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41470

Up to 6 GHz Low Noise Silicon Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Hermetic Gold-ceramic Microstrip Package functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies.