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AT-42086 - Up to 6 GHz Medium Power Silicon Bipolar Transistor

Download the AT-42086 datasheet PDF. This datasheet also covers the AT-42086_Agilent(Hewlett variant, as both devices belong to the same up to 6 ghz medium power silicon bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Hewlett-Packard’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.

1.

Key Features

  • High Output Power: 20.5 dBm Typical P1 dB at 2.0␣ GHz.
  • High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0␣ GHz.
  • Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz.
  • High Gain-Bandwidth Product: 8.0 GHz Typical fT.
  • Surface Mount Plastic Package.
  • Tape-and-Reel Packaging Option Available[1] BASE 1 420 plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter fi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT-42086_Agilent(Hewlett-Packard).pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AT-42086
Manufacturer Agilent(Hewlett-Packard)
File Size 55.96 KB
Description Up to 6 GHz Medium Power Silicon Bipolar Transistor
Datasheet download datasheet AT-42086 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avago
AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Agilent
AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor HP
AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor HP
AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor HP

Other Datasheets by Agilent(Hewlett-Packard)

Part Number Description
AT-42000 Up to 6 GHz Medium Power Up to 6 GHz Medium Power
AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor
AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor
AT-41470 Up to 6 GHz Low Noise Silicon Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0␣ GHz • High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0␣ GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] BASE 1 420 plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer.