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AT-42086
Overview
- High Output Power: 20.5 dBm Typical P1 dB at 2.0␣ GHz
- High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0␣ GHz
- Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz
- High Gain-Bandwidth Product: 8.0 GHz Typical fT
- Surface Mount Plastic Package
- Tape-and-Reel Packaging Option Available[1] BASE 1 420 plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50␣ Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42086 bipolar transistor is fabricated using Hewlett- Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 86 Plastic Package Pin Connections
