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AT42070 - Up to 6 GHz Medium Power Silicon Bipolar Transistor

This page provides the datasheet information for the AT42070, a member of the AT4 Up to 6 GHz Medium Power Silicon Bipolar Transistor family.

Datasheet Summary

Description

Hewlett-Packard’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.

The AT-42070 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package.

Features

  • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz.
  • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz.
  • Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz.
  • High Gain-Bandwidth Product: 8.0 GHz Typical fT.
  • Hermetic Gold-ceramic Microstrip Package different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that ar.

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Datasheet preview – AT42070

Datasheet Details

Part number AT42070
Manufacturer Agilent(Hewlett-Packard)
File Size 52.47 KB
Description Up to 6 GHz Medium Power Silicon Bipolar Transistor
Datasheet download datasheet AT42070 Datasheet
Additional preview pages of the AT42070 datasheet.

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Full PDF Text Transcription

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Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Hermetic Gold-ceramic Microstrip Package different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies.
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