ATF10736 - 0.512 GHz General Purpose Gallium Arsenide FET

This page provides the datasheet information for the ATF10736, a member of the ATF10736_Agilent(Hewlett 0.512 GHz General Purpose Gallium Arsenide FET family.

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Agilent(Hewlett-Packard)

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Datasheet Details

Part number	ATF10736
Manufacturer	Agilent(Hewlett-Packard)
File Size	80.82 KB
Description	0.512 GHz General Purpose Gallium Arsenide FET
Datasheet	ATF10736 Datasheet
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ATF10736 Product details

Description

The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.

Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range.

Features

High Associated Gain: 13.0␣ dB Typical at 4␣ GHz.
Low Bias: VDS = 2 V, IDS = 25␣ mA.
High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz.
Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz.
Cost Effective Ceramic Microstrip Package.
Tape-and-Reel Packaging Option Available [1].

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Published: Mar 30, 2005 |