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ATF10736 Description
The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconcnects between drain fingers.
ATF10736 Key Features
- High Associated Gain: 13.0␣ dB Typical at 4␣ GHz
- Low Bias: VDS = 2 V, IDS = 25␣ mA
- High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz
- Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz
- Cost Effective Ceramic Microstrip Package
- Tape-and-Reel Packaging Option Available [1]