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Datasheet Details
| Part number | ATF10736 |
|---|---|
| Manufacturer | Agilent(Hewlett-Packard) |
| File Size | 80.82 KB |
| Description | 0.512 GHz General Purpose Gallium Arsenide FET |
| Datasheet |
 ATF10736 Datasheet
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General Description
The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.
Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range.
Key Features
- High Associated Gain: 13.0␣ dB Typical at 4␣ GHz.
- Low Bias: VDS = 2 V, IDS = 25␣ mA.
- High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz.
- Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz.
- Cost Effective Ceramic Microstrip Package.
- Tape-and-Reel Packaging Option Available [1].