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ATF10736 Datasheet 0.512 Ghz General Purpose Gallium Arsenide Fet

Manufacturer: Agilent(Hewlett-Packard)

Overview: .. 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.

Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range.

This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconcnects between drain fingers.

Key Features

  • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz.
  • Low Bias: VDS = 2 V, IDS = 25␣ mA.
  • High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz.
  • Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz.
  • Cost Effective Ceramic Microstrip Package.
  • Tape-and-Reel Packaging Option Available [1].

More Datasheets from Agilent(Hewlett-Packard)

Part Number Description

ATF10736 Distributor