PDT0412-ST-F Datasheet | Agilent(Hewlett-Packard)

Connectorized PIN Photodiodes Technical Data PDT0X1X Features - Industry Standard Connectors- FC, ST® and SC - 1200 nm to 1650 nm Wavelength - High Responsivity - High Reliability Planar In Ga As Photodiode - Range of Flange Options - Low Dark Current - -40 °C to +85 °C Operation Description The PDT range of products includes a variety of connectorized PIN photodiodes designed for wide operating temperature, low cost applications such as fiber in the loop. The planar In Ga As photodiodes are manufactured using our MOVPE growth technology and give low leakage, high responsivity performance with excellent reliability. The construction of the devices includes a hermetically sealed photodiode and is designed to be patible with the environmental requirements of the Bellcore TA-TSY-000983 document. The product range includes a variety of pinout, connector type and flange mounting options, designed to match the majority of offerings in the marketplace. If the specific arrangement or performance you require is not listed, please contact Hewlett Packard. Highly flexible design and manufacturing processes allow both physical and electrooptic customization to suit your needs. Applications - Optical Data munication Receivers - O-E Convertors - LANS - FDDI Networks - Instrumentation - FITL - Single and Multimode Fiber munications Systems ST® is a Registered Trademark of AT&T. ESD WARNING: NORMAL HANDLING PRECAUTIONS SHOULD BE TAKEN TO AVOID STATIC DISCHARGE. 504 5965-5857E (11/96) PDT Connectorized PIN Photodiode...