1N5711
Key Features
- Low Turn-On Voltage As Low as 0.34 V at 1 mA
- Pico Second Switching Speed
- High Breakdown Voltage Up to 70 V
- Matched Characteristics Available
- Part: 1N5711
- Description: Schottky Barrier Diodes
- Category: Diode
- Manufacturer: Agilent Technologies
- Size: 48.46 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 1N5711UR-1 | Compensated Deuices Incorporated | SCHOTTKY BARRIER DIODES |
| 1N5711L | Galaxy Microelectronics | Surface mount schottky barrier diode |
| 1N5711W | WEJ | DIODE |
| 1N5711W | LGE | Surface Mount Schottky Barrier Diode |
| 1N5711 | DACO | SMALL SIGNAL SCHOTTKY DIODES |
| 1N5711UB | Microsemi | SCHOTTKY BARRIER DIODES |
| 1N5711UBCA | Microsemi | SCHOTTKY BARRIER DIODES |
| 1N5711CSM | TT Electronics | SCHOTTKY BARRIER DIODE |
| 1N5711UBD | VPT Components | Schottky Barrier Diode |
| 1N5711UBCC | VPT Components | Schottky Barrier Diode |