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1N5711 - Schottky Barrier Diodes

General Description

The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage.

Key Features

  • Low Turn-On Voltage As Low as 0.34 V at 1 mA.
  • Pico Second Switching Speed.
  • High Breakdown Voltage Up to 70 V.
  • Matched Characteristics Available.

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Other Datasheets by Agilent Technologies

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes for General Purpose Applications Technical Data 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage.