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Schottky Barrier Diodes for General Purpose Applications
Technical Data
1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900
Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available
Description/Applications
The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.
The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage.
5082-2800 Datasheet
