Agilent Technologies AT-42000
The AT-42000 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. The recommended assembly procedure is gold-eutectic die attach at 400oC and either wedge or ball bonding using 0.7 mil gold wire.| Part No. | AT-42000 |
|---|---|
| Datasheet | AT-42000 Download |
| Manufacturer |  Agilent Technologies |
| Description | Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
| Buy | Stock & Price |
FEATURES
● High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz● High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz
● Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz
● High Gain-Bandwidth Product: 9.0 GHz Typical fT This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz , makes this device easy to use as a low noise amplifier. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. See