Agilent Technologies AT-42086
The AT-42086 bipolar transistor is fabricated using Hewlett- Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. 86 Plastic Package Pin Connections EMITTER 4 COLLECTOR 3 Description Hewlett-Packard’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.FEATURES
● High Output Power: 20.5 dBm Typical P1 dB at 2.0␣ GHz● High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0␣ GHz
● Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz
● High Gain-Bandwidth Product: 8.0 GHz Typical fT
● Surface Mount Plastic Package
● Tape-and-Reel Packaging Option Available[1] BASE 1 420 plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications.