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AT31011 Datasheet PDF

Agilent Technologies AT31011

The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques.
Part No. AT31011
Datasheet AT31011 Download
Manufacturer
Agilent Technologies
Description Low Current/ High Performance NPN Silicon Bipolar Transistor
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AT31011 datasheet page 1 preview

FEATURES

● High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
● 900 MHz Performance: AT-31011: 0.9 dB NF, 13 dB GA AT-31033: 0.9 dB NF, 11 dB GA
● Characterized for End-OfLife Battery Use (2.7 V)
● SOT-143 SMT Plastic Package
● Tape-And-Reel Packaging Option Available[1]

DESCRIPTION

Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 10 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances. Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz Outline Drawing EMITTER COLLECTOR battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer.
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