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ATF-511P8 - Enhancement Mode Pseudomorphic HEMT

General Description

Agilent Technologies’s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC[3]) package.

The device is ideal as a high linearity, low-noise, medium-power amplifier.

Key Features

  • Single voltage operation.
  • High linearity and P1dB.
  • Low noise figure.
  • Excellent uniformity in product specifications.
  • Small package size: 2.0 x 2.0 x 0.75 mm.
  • Point MTTF > 300 years[2].
  • MSL-1 and lead-free.
  • Tape-and-reel packaging option available Specifications 2 GHz; 4.5V, 200 mA (Typ. ).
  • 41.7 dBm output IP3.
  • 30 dBm output power at 1 dB gain compression.
  • 1.4 dB noise figure.
  • 14.8 dB gain.

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Full PDF Text Transcription (Reference)

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Agilent ATF-511P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Agilent Technologies’s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC[3]) package. The device is ideal as a high linearity, low-noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. The thermally efficient package measures only 2 mm x 2 mm x 0.75 mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85°C. All devices are 100% RF & DC tested. Note: 1.