ATF10736 Datasheet PDF | Agilent Technologies

Agilent Technologies ATF10736

The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconcnects between drain fingers.

Part No.	ATF10736
Datasheet	ATF10736 Download
Manufacturer	Agilent Technologies
Description	0.512 GHz General Purpose Gallium Arsenide FET
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FEATURES

● High Associated Gain: 13.0␣ dB Typical at 4␣ GHz
● Low Bias: VDS = 2 V, IDS = 25␣ mA
● High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz
● Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz
● Cost Effective Ceramic Microstrip Package
● Tape-and-Reel Packaging Option Available [1]

DESCRIPTION

Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X Package

ELECTRICAL SPECIFICATIONS

, TA = 25°C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 70 70 -4.0 12.0 Min. Typ. Max. 0.9 1.2 1.4 16.5 13.0 10.5 20.0 12.0 140 130 -1.3 180 -0.5 1.4 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA P1 dB G1 dB gm Power Output @ 1 dB Gain Compression VDS = 4 V, IDS = 70 mA 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA Transconductance: VDS = 2 V, VGS = 0 V DS = 2 V, VGS = 0 V I Saturated Drain Current: V DSS VP Pinchoff Voltage: VDS = 2 V, IDS = 1 mA Note: 1.