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HMMC-5620 - 6-20 GHz High-Gain Amplifier

General Description

The HMMC-5620 is a wideband GaAs MMIC amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range.

Four MESFET cascade stages provide high gain, while the single bias supply offers ease of use.

E-Beam lithography is used to produce gate lengths of ~0.3 µm.

Key Features

  • Wide-frequency Range: 6-20 GHz.
  • High Gain: 17 dB.
  • Gain Flatness: ±1.0 dB.
  • Return Loss: Input -15 dB Output -15 dB.
  • Single Bias Supply Operation.
  • Low DC Power Dissipation: PDC ~0.5 Watts.
  • Medium Power: 20 GHz: P-1 dB : 12 dBm Psat : 13 dBm Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1410 × 1010 µm (55.5 × 39.7 mils) ±10 µm (±0.4 mils) 127 ±15 µm (5.0 ±0.6 mils) 80 × 80 µm (2.95 × 2.95 mils), or larger Descripti.

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Agilent HMMC-5620 6-20 GHz High-Gain Amplifier Data Sheet Features • Wide-frequency Range: 6-20 GHz • High Gain: 17 dB • Gain Flatness: ±1.0 dB • Return Loss: Input -15 dB Output -15 dB • Single Bias Supply Operation • Low DC Power Dissipation: PDC ~0.5 Watts • Medium Power: 20 GHz: P-1 dB : 12 dBm Psat : 13 dBm Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1410 × 1010 µm (55.5 × 39.7 mils) ±10 µm (±0.4 mils) 127 ±15 µm (5.0 ±0.6 mils) 80 × 80 µm (2.95 × 2.95 mils), or larger Description The HMMC-5620 is a wideband GaAs MMIC amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high gain, while the single bias supply offers ease of use. E-Beam lithography is used to produce gate lengths of ~0.