HMMC-5620 Datasheet PDF - Agilent 6-20 GHz High-Gain Amplifier Specs

HMMC-5620 - 6-20 GHz High-Gain Amplifier

Datasheet Summary

Description

The HMMC-5620 is a wideband GaAs MMIC ampliﬁer designed for medium output power and high gain over the 6 to 20 GHz frequency range.

Four MESFET cascade stages provide high gain, while the single bias supply offers ease of use.

E-Beam lithography is used to produce gate lengths of ~0.3 µm.

Features

Wide-frequency Range: 6-20 GHz.
High Gain: 17 dB.
Gain Flatness: ±1.0 dB.
Return Loss: Input -15 dB Output -15 dB.
Single Bias Supply Operation.
Low DC Power Dissipation: PDC ~0.5 Watts.
Medium Power: 20 GHz: P-1 dB : 12 dBm Psat : 13 dBm Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1410 × 1010 µm (55.5 × 39.7 mils) ±10 µm (±0.4 mils) 127 ±15 µm (5.0 ±0.6 mils) 80 × 80 µm (2.95 × 2.95 mils), or larger Descripti.

Datasheet Details

Part number	HMMC-5620
Manufacturer	Agilent
File Size	580.34 KB
Description	6-20 GHz High-Gain Amplifier
Datasheet	HMMC-5620 Datasheet
Additional preview pages of the HMMC-5620 datasheet.

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Full PDF Text Transcription

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Agilent HMMC-5620 6-20 GHz High-Gain Ampliﬁer Data Sheet Features • Wide-frequency Range: 6-20 GHz • High Gain: 17 dB • Gain Flatness: ±1.0 dB • Return Loss: Input -15 dB Output -15 dB • Single Bias Supply Operation • Low DC Power Dissipation: PDC ~0.5 Watts • Medium Power: 20 GHz: P-1 dB : 12 dBm Psat : 13 dBm Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1410 × 1010 µm (55.5 × 39.7 mils) ±10 µm (±0.4 mils) 127 ±15 µm (5.0 ±0.6 mils) 80 × 80 µm (2.95 × 2.95 mils), or larger Description The HMMC-5620 is a wideband GaAs MMIC ampliﬁer designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high gain, while the single bias supply offers ease of use. E-Beam lithography is used to produce gate lengths of ~0.

Published: Apr 24, 2019 |