Agilent Technologies HSCH-5330
the HSCH-5340 is selected with batch match units available as the HSCH-5341. The HSCH-5318 is selected for 6.2 dB maximum noise figure at 9.375 GHz; with RF batch match units available as the HSCH-5319. The HSCH-5314 is rated at 7.2 dB maximum noise figure at 16 GHz with RF batch match units available as the HSCH-5315.FEATURES
● Platinum Tri-Metal System High Temperature Stability● Silicon Nitride Passivation Stable, Reliable Performance
● Low Noise Figure Guaranteed 7.5 dB at 26 GHz
● High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics
● Rugged Construction 4 Grams Minimum Lead Pull
● Low Capacitance 0.10 pF Max. at 0 V
● Polyimide Scratch Protection Outline 07 130 (5) 100 (4) CATHODE GOLD LEADS 225 (9) 200 (8) 310 (12) 250 (10) 30 MIN (1) 225 (9) 170 (7) 135 (5) 90 (3) 135 (5) 90 (3) 12 (.5) 8 (.3)
DESCRIPTION
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Agilent beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.