HSCH-5332 Datasheet Text
Beam Lead Schottky Diodes for Mixers and Detectors (1- 26 GHz)
Technical Data
HSCH-5300 Series
Features
- Platinum Tri-Metal System High Temperature Stability
- Silicon Nitride Passivation Stable, Reliable Performance
- Low Noise Figure Guaranteed 7.5 dB at 26 GHz
- High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics
- Rugged Construction 4 Grams Minimum Lead Pull
- Low Capacitance 0.10 pF Max. at 0 V
- Polyimide Scratch Protection
Outline 07
130 (5) 100 (4)
CATHODE GOLD LEADS
225 (9) 200 (8)
310 (12) 250 (10)
30 MIN (1)
225 (9) 170 (7)
135 (5) 90 (3) 135 (5) 90 (3)
12 (.5) 8 (.3)
Description
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.
The Agilent beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.
SILICON
710 (28) 670 (26)
GLASS
DIMENSIONS IN µm (1/1000 inch)
60 (2) 40 (1)
Maximum Ratings
Pulse Power Incident at TA = 25°C .......................................................... 1 W Pulse Width = 1 µs, Du = 0.001...
