HSCH-5332 Overview
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.
HSCH-5332 Key Features
- Platinum Tri-Metal System High Temperature Stability
- Silicon Nitride Passivation Stable, Reliable Performance
- Low Noise Figure Guaranteed 7.5 dB at 26 GHz
- High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics
- Rugged Construction 4 Grams Minimum Lead Pull
- Low Capacitance 0.10 pF Max. at 0 V
- Polyimide Scratch Protection
- 1 W Pulse Width = 1 µs, Du = 0.001
- 150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature
- Operating Temperature Range
