Datasheet4U Logo Datasheet4U.com

HSCH-9161 Datasheet GaAs Detector Diode

Manufacturer: Agilent Technologies

General Description

The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process.

Applications This diode is suitable for medium– low barrier, zero bias detector applications.The HSCH916x is functional through W–band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits.

Assembly Techniques Diodes are ESD sensitive.

Overview

HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet.

Key Features

  • Low Junction Capacitance.
  • fc >200 GHz.
  • Lower Temperature Coefficient than Silicon.
  • Durable Construction.
  • Typical 6 gram beam lead strength.
  • High power handling capability 231 120 (9.1) (4.7) Note: All dimensions in microns (mils) Beam Lead = 7-9 um Die Thickness.