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HSCH-9161 - GaAs Detector Diode

Description

The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process.

low barrier, zero bias detector applications.The HSCH916x is functional through W band (110 GHz) and can be mounte

Features

  • Low Junction Capacitance.
  • fc >200 GHz.
  • Lower Temperature Coefficient than Silicon.
  • Durable Construction.
  • Typical 6 gram beam lead strength.
  • High power handling capability 231 120 (9.1) (4.7) Note: All dimensions in microns (mils) Beam Lead = 7-9 um Die Thickness.

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Datasheet Details

Part number HSCH-9161
Manufacturer Agilent
File Size 57.03 KB
Description GaAs Detector Diode
Datasheet download datasheet HSCH-9161 Datasheet
Additional preview pages of the HSCH-9161 datasheet.

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HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process. Applications This diode is suitable for medium– low barrier, zero bias detector applications.The HSCH916x is functional through W–band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits. Assembly Techniques Diodes are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly. Diode ESD precautions, handling considerations, and bonding methods are critical factors in successful diode performance and reliability. 231 (9.1) 250 250 (9.8) (9.
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