A3356 - MICROWAVE LOW NOISE RF TRANSISTOR

Features

The A3356 is an NPN silicon Epitaxial Transistor. It has low noise and high power gain The A3356 is available in SOT-23 package. Low noise Collector Current:100mA (Max) High Frequency: 5.0GHz (Typ) Collector-Emitter Voltage: 12V Available in SOT-23 Package.

AiT Semiconductor

Datasheet Details

Part number	A3356
Manufacturer	AiT Semiconductor
File Size	136.49 KB
Description	MICROWAVE LOW NOISE RF TRANSISTOR
Datasheet	A3356 Datasheet
Additional preview pages of the A3356 datasheet.

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Full PDF Text Transcription

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AiT Semiconductor Inc. www.ait-ic.com A3356 100mA, 5.0GHz, 12V, NPN SILICON EPITAXIAL MICROWAVE LOW NOISE RF TRANSISTOR DESCRIPTION FEATURES The A3356 is an NPN silicon Epitaxial Transistor. It has low noise and high power gain The A3356 is available in SOT-23 package. Low noise Collector Current:100mA (Max) High Frequency: 5.0GHz (Typ) Collector-Emitter Voltage: 12V Available in SOT-23 Package ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23 E3 A3356E3R-XXX A3356E3VR-XXX XXX: Ranking R24 or R25 Note R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package PIN DESCRIPTION VHF UHF CATV hFE CLASSIFICATION Rank hFE Value R24/Q 50-160 R25/Q 125-250 Pin # 1 2 3 Top View Function Base Emitter Collector REV1.

Published: Jun 5, 2015 |