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A4102 - LDO MODE OVP WITH INTEGRATED P-MOSFET

Description

The A4102 is Li+ charger IC with integrated P-MOSFET.

The device is fabricated with advanced CMOS technology to achieve maintaining low static power dissipation over a very broad VCC operating range.

Features

  • A Built-In P-MOSFET.
  • LDO mode makes CHRIN voltage stable around 5.5V.
  • Range of operation input voltage: Max 15V.
  • Charging current up to 1A.
  • Environment Temperature: -20℃ ~ 85℃.
  • Available in DFN8(2x2) Package.

📥 Download Datasheet

Datasheet Details

Part number A4102
Manufacturer AiT Semiconductor
File Size 402.07 KB
Description LDO MODE OVP WITH INTEGRATED P-MOSFET
Datasheet download datasheet A4102 Datasheet

Full PDF Text Transcription

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AiT Semiconductor Inc. www.ait-ic.com A4102 LDO MODE OVP WITH INTEGRATED P-MOSFET BATTERY MANAGEMENT DESCRIPTION The A4102 is Li+ charger IC with integrated P-MOSFET. The device is fabricated with advanced CMOS technology to achieve maintaining low static power dissipation over a very broad VCC operating range. The A4102 integrates a P-MOSFET and Schottky diode which is normally a discrete device employed for conventional battery charging design of mobile phone system. In addition to that, A4102 works like a LDO mode to keep CHRIN voltage stable when ACIN goes high. And thus it will not trigger the CHRIN pin over-voltage protection when ACIN voltage increased to as high as 15V. FEATURES  A Built-In P-MOSFET  LDO mode makes CHRIN voltage stable around 5.
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