AH8113 Datasheet | AiT Semiconductor

Ai T Semiconductor Inc. .ait-ic. CMOS HALL SWITCH LOW CURRENT CONSUMPTION, HIGH SENSITIVITY DESCRIPTION The AH8113 is an Integrated Hall-Effect Sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 2.4V-5.5V. Precise magnetic switching points and high temperature stability are achieved through the unique design of the internal circuit. An onboard clock scheme is used to reduce the average operating current of the IC. During the operate phase the IC pares the actual magnetic field detected with the internally pensated switching points. The output Q is switched at the end of each operating phase. During the Stand-by phase the output stage is latched and the current consumption of the device reduced to some μA. The IC switching behavior is Omnipolar, it can be switched on with either the North or South pole of a magnet. The AH8113 is available in TSOT-23 and DFN3(2x2) Packages Features - Micro power design - 2.4 V to 5.5 V battery operation - High sensitivity and high stability of the magnetic switching points - High resistance to mechanical stress - Digital output signal - Switching for both poles of a magnet (omnipolar) - Not suitable for automotive application - Available in TSOT-23 and DFN3(2x2) Packages APPLICATION - Cover switch in clam-shell cellular phones - Cover switch in Notebook PC/PDA - Contact-less switch in consumer products TYPICAL APPLICATION ORDERING INFORMATION Package Type Part Number TSOT-23 AH8113TE3R TE3 AH8113TE3VR DFN3 (2x2) AH8113J3R...