AM10P06 - P-CHANNE MOSFET

AiT Semiconductor

General Description

The AM10P06 is available in TO-252 Package BVDSS -60V RDSON 100mΩ ID -10A FEATURE Advanced high cell density Trench Technology RDS(ON)typ.=100mΩ @ VGS=-10V Excellent dv/dt effect decline Super Low Gate Charge ORDERING INFORMATION PIN DESCRIPTION Package

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AM10P06 p-channe mosfet by AiT Semiconductor - Datasheet Preview

Datasheet Details

Part number	AM10P06
Manufacturer	AiT Semiconductor
File Size	846.56 KB
Description	P-CHANNE MOSFET
Datasheet	AM10P06 Datasheet

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AiT Semiconductor Inc. www.ait-ic.com AM10P06 MOSFET -60V, -10A P-CHANNEL DESCRIPTION The AM10P06 is available in TO-252 Package BVDSS -60V RDSON 100mΩ ID -10A FEATURE • Advanced high cell density Trench Technology • RDS(ON)typ.=100mΩ @ VGS=-10V • Excellent dv/dt effect decline • Super Low Gate Charge ORDERING INFORMATION PIN DESCRIPTION Package Type TO-252 SPQ: 2,500pcs/Reel Note Part Number AM10P06DR D AM10P06DVR V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Pin# 1 2 3 Symbol G D S Function Gate Drain Source REV1.0 - DEC 2022 RELEASED - -1- AiT Semiconductor Inc. www.ait-ic.com AM10P06 MOSFET -60V, -10A P-CHANNEL ABSOLUTE MAXIMUM RATINGS TA= 25°C, unless otherwise specified.