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AM2317 - -20V P-CHANNEL ENHANCEMENT MODE MOSFET MOSFET

Key Features

  • The AM2317 is the P-Channel logic enhancement.
  • mode power field effect transistor is produced using.
  • high cell density advanced trench technology.
  • This high density process is especially tailored to.
  • minimize on-state resistance. These devices are.
  • particularly suited for low voltage.

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Datasheet Details

Part number AM2317
Manufacturer AiT Semiconductor
File Size 657.24 KB
Description -20V P-CHANNEL ENHANCEMENT MODE MOSFET MOSFET
Datasheet download datasheet AM2317 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AiT Semiconductor Inc. www.ait-ic.com AM2317 MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2317 is the P-Channel logic enhancement  mode power field effect transistor is produced using  high cell density advanced trench technology.  This high density process is especially tailored to  minimize on-state resistance. These devices are  particularly suited for low voltage application, and low in-line power loss are needed in a very small outline  surface mount package.  -20V/-4.6A, RDS(ON)=35mΩ(typ.)@VGS=-4.5V -20V/-4.1A,RDS(ON)=45mΩ(typ.)@VGS=-2.5V -20V/-3.6A,RDS(ON)=53mΩ(typ.)@VGS=-1.