AM2317
Overview
- mode power field effect transistor is produced using
- high cell density advanced trench technology.
- This high density process is especially tailored to
- minimize on-state resistance. These devices are
- particularly suited for low voltage application, and low in-line power loss are needed in a very small outline
- surface mount package.
- -20V/-4.6A, RDS(ON)=35mΩ(typ.)@VGS=-4.5V -20V/-4.1A,RDS(ON)=45mΩ(typ.)@VGS=-2.5V -20V/-3.6A,RDS(ON)=53mΩ(typ.)@VGS=-1.8V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS compliance Available in SOT-23 Package The AM2317 is available in SOT-23 package.
