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AM3400A - 30V N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

The AM3400A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 30V/5.8A, RDS(ON) =22mΩ(typ. )@VGS =10V.
  • 30V/5.0A, RDS(ON) =25mΩ(typ. )@VGS =4.5V.
  • 30V/3.5A, RDS(ON) =31mΩ(typ. )@VGS =2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • Available in SOT-23 package The AM3400A is available in SOT-23 package.

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Datasheet Details

Part number AM3400A
Manufacturer AiT Semiconductor
File Size 325.94 KB
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM3400A Datasheet

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AiT Semiconductor Inc. www.ait-ic.com   AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE   DESCRIPTION The AM3400A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. FEATURES  30V/5.8A, RDS(ON) =22mΩ(typ.)@VGS =10V  30V/5.0A, RDS(ON) =25mΩ(typ.)@VGS =4.5V  30V/3.5A, RDS(ON) =31mΩ(typ.)@VGS =2.