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AM3401 - -30V P-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • The AM3401 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON) low gate charge and.
  • -30V/-4.3A, RDS(ON) =47mΩ(typ. )@VGS =-10V -30V/-3.5A, RDS(ON) =55mΩ(typ. )@VGS =-4.5V -30V/-2.5A, RDS(ON) =70mΩ(typ. )@VGS =-2.5V Super high density cell design for extremely low operation gate as 2.5V. RDS(ON).
  • Exceptional on-resistance and Maximum DC This device is suita.

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Datasheet Details

Part number AM3401
Manufacturer AiT Semiconductor
File Size 754.45 KB
Description -30V P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM3401 Datasheet

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AiT Semiconductor Inc. www.ait-ic.com AM3401 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3401 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON) low gate charge and     -30V/-4.3A, RDS(ON) =47mΩ(typ.)@VGS =-10V -30V/-3.5A, RDS(ON) =55mΩ(typ.)@VGS =-4.5V -30V/-2.5A, RDS(ON) =70mΩ(typ.)@VGS =-2.5V Super high density cell design for extremely low operation gate as 2.5V. RDS(ON)  Exceptional on-resistance and Maximum DC This device is suitable for use as a load switch or other general applications.