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AM4407 - -30V P-CHANNEL ENHANCEMENT MODE MOSFET

General Description

The AM4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 30V/-12.0A, RDS(ON) = 12mΩ(typ)@VGS =-10V.
  • -30V/-7.5A, RDS(ON) = 19mΩ(typ)@VGS =-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Available in SOP8 Package These devices are particularly suited for low voltage.

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Datasheet Details

Part number AM4407
Manufacturer AiT Semiconductor
File Size 465.36 KB
Description -30V P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM4407 Datasheet

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Full PDF Text Transcription (Reference)

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AiT Semiconductor Inc. www.ait-ic.com AM4407 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. FEATURES  30V/-12.0A, RDS(ON) = 12mΩ(typ)@VGS =-10V  -30V/-7.5A, RDS(ON) = 19mΩ(typ)@VGS =-4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  Available in SOP8 Package These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.