Datasheet4U Logo Datasheet4U.com

AM4420 - 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • The AM4420 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, This high density process.
  • 30V/13A, RDS(ON)= 8mΩ@VGS= 10V 30V/12A, RDS(ON)= 12mΩ@VGS= 4.5V Super high density cell design for extremely low is especially tailored to minimize on-state resistance. RDS(ON).
  • Exceptional on-resistance and maximum DC current capability These devices are particularly suited for low.
  • Available in SOP8 Package voltage.

📥 Download Datasheet

Datasheet Details

Part number AM4420
Manufacturer AiT Semiconductor
File Size 307.71 KB
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM4420 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AM4420N N-Channel MOSFET Analog Power
AM442 STROM-WANDLER-IC Analog Microelectronics
AM4421P P-Channel MOSFET Analog Power
AM4422N N-Channel MOSFET Analog Power
AM4424N N-Channel MOSFET Analog Power

Other Datasheets by AiT Semiconductor

Part Number Description
AM4407 -30V P-CHANNEL ENHANCEMENT MODE MOSFET
AM4435 -30V P-CHANNEL ENHANCEMENT MODE MOSFET
AM40T120 MOSFET
AM40T65 650V 40A IGBT MOSFET
AM4185 P-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AiT Semiconductor Inc. www.ait-ic.com   AM4420 MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4420 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, This high density process    30V/13A, RDS(ON)= 8mΩ@VGS= 10V 30V/12A, RDS(ON)= 12mΩ@VGS= 4.5V Super high density cell design for extremely low is especially tailored to minimize on-state resistance.