Datasheet4U Logo Datasheet4U.com

AM4812 - 30V N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

The AM4812 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density.

Advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 30V / 7.8A, RDS(ON) = 16mΩ (typ. )@VGS = 10V.
  • 30V / 5.8A, RDS(ON) = 22mΩ (typ. )@VGS = 4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • Available in SOP8 Package The AM4812 is particularly suited for low voltage.

📥 Download Datasheet

Datasheet Details

Part number AM4812
Manufacturer AiT Semiconductor
File Size 456.59 KB
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM4812 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AM4811P P-Channel MOSFET Analog Power
AM480234A LCD Module Ampire
AM480234G1TMCW-00 LCD Module Ampire
AM480234G1TMQW-00 TFT Module Ampire
AM480272-00-0 TFT LCD Ampire

Other Datasheets by AiT Semiconductor

Part Number Description
AM40T120 MOSFET
AM40T65 650V 40A IGBT MOSFET
AM4185 P-CHANNEL MOSFET
AM4407 -30V P-CHANNEL ENHANCEMENT MODE MOSFET
AM4420 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The AM4812 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. FEATURES  30V / 7.8A, RDS(ON) = 16mΩ (typ.)@VGS = 10V  30V / 5.8A, RDS(ON) = 22mΩ (typ.)@VGS = 4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOP8 Package The AM4812 is particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.