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AM4812 - 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Description

The AM4812 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density.

Advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

Features

  • 30V / 7.8A, RDS(ON) = 16mΩ (typ. )@VGS = 10V.
  • 30V / 5.8A, RDS(ON) = 22mΩ (typ. )@VGS = 4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • Available in SOP8 Package The AM4812 is particularly suited for low voltage.

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Datasheet preview – AM4812

Datasheet Details

Part number AM4812
Manufacturer AiT Semiconductor
File Size 456.59 KB
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM4812 Datasheet
Additional preview pages of the AM4812 datasheet.

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Full PDF Text Transcription

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AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The AM4812 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. FEATURES  30V / 7.8A, RDS(ON) = 16mΩ (typ.)@VGS = 10V  30V / 5.8A, RDS(ON) = 22mΩ (typ.)@VGS = 4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOP8 Package The AM4812 is particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
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