AM8958 Datasheet | AiT Semiconductor

AiT Semiconductor Inc. .ait-ic.   MOSFET N+P PAIR ENHANCEMENT MODE DESCRIPTION Features The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook puter power management and other battery powered circuits, where high-side switching, low inline power loss and resistance to transient are needed. The AM8958 is available in SOP8 Package N-Channel - 30V /6.8A, RDS(ON) = 23mΩ(typ.)@VGS = 10V - 30V /6.5A,...