AM8958 Description
FEATURES The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook puter power management and other battery powered circuits, where high-side...
AM8958 Key Features
- 30V /6.8A, RDS(ON) = 23mΩ(typ.)@VGS = 10V
- 30V /6.5A, RDS(ON) = 34mΩ(typ.)@VGS = 4.5V P-Channel
- 30V / -6.5A, RDS(ON) = 35mΩ(typ.)@VGS = -10V
- 30V / -4.4A, RDS(ON) = 60mΩ(typ.)@VGS = -4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and Maximum DC
- Available in SOP8 Package
- Power Management in Note book
- Portable Equipment
- Battery Powered System