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AM8958 - N+P PAIR ENHANCEMENT MODE MOSFET

Key Features

  • The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage.

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Datasheet Details

Part number AM8958
Manufacturer AiT Semiconductor
File Size 529.97 KB
Description N+P PAIR ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM8958 Datasheet

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AiT Semiconductor Inc. www.ait-ic.com   AM8958 MOSFET N+P PAIR ENHANCEMENT MODE DESCRIPTION FEATURES The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low inline power loss and resistance to transient are needed. The AM8958 is available in SOP8 Package N-Channel  30V /6.8A, RDS(ON) = 23mΩ(typ.)@VGS = 10V  30V /6.5A, RDS(ON) = 34mΩ(typ.)@VGS = 4.5V P-Channel  -30V / -6.5A, RDS(ON) = 35mΩ(typ.)@VGS = -10V  -30V / -4.