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AFC4511W - N&P-Channel MOSFET

Download the AFC4511W datasheet PDF. This datasheet also covers the AFC4511W-Alfa variant, as both devices belong to the same n&p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFC4511W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • N-Channel 20V/ 9A,RDS(ON)=13mΩ@VGS=4.5V 20V/ 7A,RDS(ON)=15mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=17mΩ@VGS=1.8V P-Channel -20V/-8A,RDS(ON)=33mΩ@VGS=-4.5V -20V/-6A,RDS(ON)=43mΩ@VGS=-2.5V -20V/-5A,RDS(ON)=63mΩ@VGS=-1.8V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFC4511W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFC4511W
Manufacturer Alfa-MOS
File Size 965.13 KB
Description N&P-Channel MOSFET
Datasheet download datasheet AFC4511W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFC4511W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFC4511W 20V N & P Pair Enhancement Mode MOSFET Features N-Channel 20V/ 9A,RDS(ON)=13mΩ@VGS=4.5V 20V/ 7A,RDS(ON)=15mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=17mΩ@VGS=1.8V P-Channel -20V/-8A,RDS(ON)=33mΩ@VGS=-4.5V -20V/-6A,RDS(ON)=43mΩ@VGS=-2.5V -20V/-5A,RDS(ON)=63mΩ@VGS=-1.