AFN1032E Datasheet | Alfa-MOS

Description AFN1032E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-523 ) 30V N-Channel Enhancement Mode MOSFET Features 30V/0.6A,RDS(ON)=500mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=600mΩ@VGS=2.5V 30V/0.4A,RDS(ON)=880mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-523 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN1032ES52RG SOT-523 ϡ...