AFN1034E Datasheet | Alfa-MOS

Description AFN1034E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-563 ) 30V N-Channel Enhancement Mode MOSFET Features 30V/0.6A,RDS(ON)=450mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=600mΩ@VGS=2.5V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-563 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 Ordering Information Part Ordering No. Part...