Alfa-MOS AFN1510S
N-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
AFN1510S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( TO-220-3L )FEATURES
100V/25A,RDS(ON)= 46mΩ@VGS=10V 100V/20A,RDS(ON)= 52mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application High Frequency Boost Converter LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN1510S AFN1510ST220TG AAAAAA TO-220-3L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN1510ST220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Aug. 2012DESCRIPTION
Gate Drain Source Unit Tube Quantity 50 EA P