AFN1510S Datasheet | Alfa-MOS

Alfa-MOS Technology 100V N-Channel Enhancement Mode MOSFET General Description AFN1510S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-220-3L ) Features 100V/25A,RDS(ON)= 46mΩ@VGS=10V 100V/20A,RDS(ON)= 52mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application High Frequency Boost Converter LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part...