Alfa-MOS AFN1998S
N-Channel Enhancement Mode MOSFET
| Part No. | AFN1998S |
|---|---|
| Datasheet | AFN1998S Download |
| Manufacturer |  Alfa-MOS |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN1998S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( TO-263-2L )FEATURES
100V/10A,RDS(ON)= 21mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Application DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package 1998S AFN1998ST263RG AAAAAA TO-263-2L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN1998ST263RG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2014DESCRIPTION
Gate Source Drain Unit Tape & Reel Quantity 800 EA
