AFN2304AS Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFN2304AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 30V N-Channel Enhancement Mode MOSFET Features 30V/2.4A,RDS(ON)=65mΩ@VGS=10V 30V/2.0A,RDS(ON)=90mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G S D Description Gate Source...