Alfa-MOS AFN2304AS
N-Channel MOSFET
GENERAL DESCRIPTION
AFN2304AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-23 ) AFN2304AS 30V N-Channel Enhancement Mode MOSFETFEATURES
30V/2.4A,RDS(ON)=65mΩ@VGS=10V 30V/2.0A,RDS(ON)=90mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G S DDESCRIPTION
Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFN2304ASS23RG S4YW SOT-23 ϡʳ S4 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN2304ASS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev