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AFN2318A Datasheet PDF

Alfa-MOS AFN2318A

N-Channel MOSFET

Part No. AFN2318A
Datasheet AFN2318A Download
Manufacturer
Alfa-MOS
Description N-Channel MOSFET
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AFN2318A datasheet page 1 preview

GENERAL DESCRIPTION

AFN2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin

DESCRIPTION

( SOT-23 ) AFN2318A 40V N-Channel Enhancement Mode MOSFET

FEATURES

40V/2.6A,RDS(ON)= 68mΩ@VGS=10V 40V/2.2A,RDS(ON)= 88mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN2318AS23RG 8AYW SOT-23 ϡʳ 8A parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
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