Alfa-MOS AFN2326BS
N-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
AFN2326BS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-23-3L ) AFN2326BS 150V N-Channel Enhancement Mode MOSFETFEATURES
150V/1.5A,RDS(ON)=350mΩ@VGS=10V 150V/1.0A,RDS(ON)=400mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application DC/DC Converters Load Switch LED Backlighting in LCD TVs Pin Define Pin 1 2 3 Symbol G S DDESCRIPTION
Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFN2326BSS23RG 26BYW SOT-23-3L ϡʳ 26B parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W w