AFN2326BS Datasheet | Alfa-MOS

Description AFN2326BS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) 150V N-Channel Enhancement Mode MOSFET Features 150V/1.5A,RDS(ON)=350mΩ@VGS=10V 150V/1.0A,RDS(ON)=400mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application DC/DC Converters Load Switch LED Backlighting in LCD TVs Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFN2326BSS23RG 26BYW SOT-23-3L ϡʳ 26B parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W...