AFN2326BS - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2326BS, a member of the AFN2326BS-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

Part number	AFN2326BS
Manufacturer	Alfa-MOS
File Size	424.87 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN2326BS Datasheet
Additional preview pages of the AFN2326BS datasheet.

AFN2326BS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

150V/1.5A,RDS(ON)=350mΩ@VGS=10V 150V/1.0A,RDS(ON)=400mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

Other Datasheets by Alfa-MOS

Published: Dec 11, 2018 |