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AFN2378S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2378S, a member of the AFN2378S-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN2378S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 60V/6.0A,RDS(ON)=35mΩ@VGS=10V 60V/4.2A,RDS(ON)=40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

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Datasheet Details

Part number AFN2378S
Manufacturer Alfa-MOS
File Size 530.00 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2378S Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2378S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFN2378S 60V N-Channel Enhancement Mode MOSFET Features 60V/6.0A,RDS(ON)=35mΩ@VGS=10V 60V/4.2A,RDS(ON)=40mΩ@VGS=4.
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