Alfa-MOS AFN3402AS
N-Channel MOSFET
GENERAL DESCRIPTION
AFN3402AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-23 ) AFN3402AS 30V N-Channel Enhancement Mode MOSFETFEATURES
30V/4.0A,RDS(ON)=48mΩ@VGS=10V 30V/3.0A,RDS(ON)=52mΩ@VGS=4.5V 30V/2.5A,RDS(ON)=60mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 Symbol G S DDESCRIPTION
Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFN3402ASS23RG 2SYW SOT-23 ϡʳ 2S parts code ϡʳ Y year c