AFN3458BW Datasheet | Alfa-MOS

Description AFN3458BW, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) 60V N-Channel Enhancement Mode MOSFET Features 60V/5.6A,RDS(ON)=135mΩ@VGS=10V 60V/3.8A,RDS(ON)=145mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Description Drain Drain Gate Source Drain Drain Ordering Information Part Ordering No. Part Marking Package AFN3458BWTS6RG 58BYW TSOP-6 ϡʳ 58B parts code ϡʳ Y year...