Datasheet4U.com

AFN3458BW Datasheet PDF

Alfa-MOS AFN3458BW

N-Channel MOSFET

Part No. AFN3458BW
Datasheet AFN3458BW Download
Manufacturer
Alfa-MOS
Description N-Channel MOSFET
Buy Stock & Price
AFN3458BW datasheet page 1 preview

GENERAL DESCRIPTION

AFN3458BW, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin

DESCRIPTION

( TSOP-6 ) AFN3458BW 60V N-Channel Enhancement Mode MOSFET

FEATURES

60V/5.6A,RDS(ON)=135mΩ@VGS=10V 60V/3.8A,RDS(ON)=145mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D

DESCRIPTION

Drain Drain Gate Source Drain Drain Ordering Information Part Ordering No. Part Marking Package AFN3458BWTS6RG 58BYW TSOP-6 ϡʳ 58B parts code ϡʳ Y year co
AFN3458BW page 2 preview AFN3458BW page 3 preview