AFN4286WS - N-Channel MOSFET

This page provides the datasheet information for the AFN4286WS, a member of the AFN4286WS-Alfa N-Channel MOSFET family.

Product Overview

Alfa-MOS

Datasheet Details

Part number	AFN4286WS
Manufacturer	Alfa-MOS
File Size	558.96 KB
Description	N-Channel MOSFET
Datasheet	AFN4286WS Datasheet
Additional preview pages of the AFN4286WS datasheet.

AFN4286WS Product details

Description

AFN4286WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

40V/8A,RDS(ON)= 33mΩ@VGS=10V 40V/5A,RDS(ON)= 38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

📁 Similar Datasheet

AFN2308AS23RG - N-Channel 60V MOSFET (VBsemi)
AFND1208U1 - 512Mbit (64M x 8-Bit)NAND FLASH (ATO)
AFND1G08U3 - 1G-bit NAND FLASH (ATO)

Other Datasheets by Alfa-MOS

AFN4210W - N-Channel MOSFET
AFN4214W - N-Channel MOSFET
AFN4228W - N-Channel MOSFET
AFN4240S - N-Channel Enhancement Mode MOSFET
AFN4248W - N-Channel MOSFET
AFN4048WS - N-Channel MOSFET
AFN4056WS - N-Channel MOSFET
AFN4058WS - N-Channel MOSFET

Published: Nov 26, 2018 |