AFN4286WS Description
AFN4286WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4286WS 40V N-Channel Enhancement Mode MOSFET.
AFN4286WS Key Features
- Secondary Side