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AFN4997W Datasheet PDF

Alfa-MOS AFN4997W

N-Channel MOSFET

Part No. AFN4997W
Datasheet AFN4997W Download
Manufacturer
Alfa-MOS
Description N-Channel MOSFET
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AFN4997W datasheet page 1 preview

GENERAL DESCRIPTION

AFN4997W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin

DESCRIPTION

( SOP-8P ) AFN4997W 90V N-Channel Enhancement Mode MOSFET

FEATURES

90V/6.8A,RDS(ON)=68mΩ@VGS=10V 90V/5.6A,RDS(ON)=75mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No. Part Marking Package AFN4997WS8RG 4997W SOP-8P ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN4997WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A May 2014

DESCRIPTION

Source 1 Gate 1 Source 2 Gate 2
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