• Part: AFN5510S
  • Manufacturer: Alfa-MOS
  • Size: 834.65 KB
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AFN5510S Description

AFN5510S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.