AFN5510S Datasheet PDF

GENERAL DESCRIPTION

AFN5510S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

FEATURES

100V/30A,RDS(ON)= 22mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin

DESCRIPTION

( TO-252-2L ) Application Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN5510ST252RG 5510S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN5510ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2014

DESCRIPTION

Gate Source Drain Unit Tape & Reel Quantity 2500 EA Page 1 A