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AFN6027S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN6027S, a member of the AFN6027S-Alfa N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

AFN6027S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 60V/40A,RDS(ON)= 5.0mΩ@VGS=10V z 60V/30A,RDS(ON)= 6.2mΩ@VGS=6.0V z 60V/20A,RDS(ON)= 8.4mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Pin.

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Datasheet Details

Part number AFN6027S
Manufacturer Alfa-MOS
File Size 335.75 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN6027S Datasheet
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Alfa-MOS Technology AFN6027S 60V N-Channel Enhancement Mode MOSFET General Description AFN6027S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features z 60V/40A,RDS(ON)= 5.0mΩ@VGS=10V z 60V/30A,RDS(ON)= 6.2mΩ@VGS=6.0V z 60V/20A,RDS(ON)= 8.4mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Pin Description ( TO-252-2L ) Application z Motor and Load Control z Power Management in White LED System z Push Pull Converter z LCD TV Inverter & AD/DC Inverter Systems.
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