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AFN7002KAS - N-Channel MOSFET

This page provides the datasheet information for the AFN7002KAS, a member of the AFN7002KAS-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN7002KAS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.3A , R DS(ON)=3.0Ω@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 2KV ) Diode design.
  • in SOT-23 package design.

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Datasheet Details

Part number AFN7002KAS
Manufacturer Alfa-MOS
File Size 735.40 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7002KAS Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7002KAS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN7002KAS 60V N-Channel Enhancement Mode MOSFET Features 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.3A , R DS(ON)=3.0Ω@VGS=4.
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