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AFN7308S - 60V N-Channel MOSFET

This page provides the datasheet information for the AFN7308S, a member of the AFN7308S-Alfa 60V N-Channel MOSFET family.

Datasheet Summary

Description

AFN7308S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • ID=8A,RDS(ON)=45mΩ@VGS=10V.
  • ID=6A,RDS(ON)=50mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3.3X3.3-8L package design.

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Datasheet Details

Part number AFN7308S
Manufacturer Alfa-MOS
File Size 523.70 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet AFN7308S Datasheet
Additional preview pages of the AFN7308S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7308S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFN7308S 60V N-Channel Enhancement Mode MOSFET Features  ID=8A,RDS(ON)=45mΩ@VGS=10V  ID=6A,RDS(ON)=50mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN3.3X3.
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