AFN7308S
Description
AFN7308S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Key Features
- ID=8A,RDS(ON)=45mΩ@VGS=10V
- ID=6A,RDS(ON)=50mΩ@VGS=4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- DFN3.3X3.3-8L package design
Applications
- DC-DC Converter
