Alfa-MOS AFN8936
N-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
AFN8936, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-89-3L ) AFN8936 60V N-Channel Enhancement Mode MOSFETFEATURES
60V/4.6A,RDS(ON)=48mΩ@VGS=10V 60V/3.6A,RDS(ON)=54mΩ@VGS=4.5V 60V/2.0A,RDS(ON)=95mΩ@VGS=3.3V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 Symbol G D SDESCRIPTION
Gate Drain Source Ordering Information Part Ordering No. Part Marking Package AFN8936S89RG 36YW SOT-89-3L ϡʳ 36 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN