AFP1413 Datasheet PDF

GENERAL DESCRIPTION

AFP1413, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin

DESCRIPTION

( SOT-323 ) AFP1413 20V P-Channel Enhancement Mode MOSFET

FEATURES

-20V/-3.0A,RDS(ON)=125mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=160mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design Application Power Management in Note book Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP1413S32RG 13YW SOT-323 ϡʳ 13 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week co