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AFP2303A - P-Channel MOSFET

Download the AFP2303A datasheet PDF. This datasheet also covers the AFP2303A-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP2303A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -30V/-4.0A,RDS(ON)=90mΩ@VGS=-10.0V.
  • -30V/-2.8A,RDS(ON)=125mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP2303A-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP2303A
Manufacturer Alfa-MOS
File Size 421.07 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP2303A Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP2301AS 20V P-Channel MOSFET
AFP2307A P-Channel MOSFET
AFP2309A 60V P-Channel MOSFET
AFP2311 20V P-Channel Enhancement Mode MOSFET
AFP2311A 20V P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP2303A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2303A 30V P-Channel Enhancement Mode MOSFET Features  -30V/-4.0A,RDS(ON)=90mΩ@VGS=-10.0V  -30V/-2.8A,RDS(ON)=125mΩ@VGS=-4.