AFP2303A Description
AFP2303A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2303A 30V P-Channel Enhancement Mode MOSFET.
AFP2303A Key Features
- 30V/-4.0A,RDS(ON)=90mΩ@VGS=-10.0V
- 30V/-2.8A,RDS(ON)=125mΩ@VGS=-4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-23 package design
- Battery Switch for Portable Devices
- puters
- Bus Switch
- Load Switch LED Display