AFP2303A Datasheet | Alfa-MOS

Description AFP2303A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 30V P-Channel Enhancement Mode MOSFET Features - -30V/-4.0A,RDS(ON)=90mΩ@VGS=-10.0V - -30V/-2.8A,RDS(ON)=125mΩ@VGS=-4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23 package design Application - Battery Switch for Portable Devices - puters - Bus Switch - Load Switch LED Display Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2303AS23RG 33YW SOT-23 ※ 33 parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z =...