AFP2319A Description
AFP2319A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2319A 40V P-Channel Enhancement Mode MOSFET.
AFP2319A Key Features
- ID=-3.0A,RDS(ON)=90mΩ@VGS=-10V
- ID=-2.4A,RDS(ON)=120mΩ@VGS=-4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-23 package design
- Load Switch
- DC-DC System